半导体级晶体生长炉CG6000
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| Performance 性能 | |||||||||
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| Furnace Chamber Diameter 炉腔内径 | 762 mm (30 in) | ||||||||
| Pull Chamber Doorway Height 副室高度 | 2108 mm (83 in) | ||||||||
| Throat Diameter 喉口直径 | 0-508 mm/hr | ||||||||
| Seed Jog Speed (Nominal) 籽晶快速提升速率（最大） | 508 mm/min | ||||||||
| Total Crucible Travel 坩锅最大行程 | 292 mm (11.5 in ) | ||||||||
| Crucible Lift Rate 坩锅提升速率 | 0-254 mm/hr | ||||||||
| Crucible Jog Speed (Nominal) 坩锅快速提升速率（最大） | 50.8 mm/min | ||||||||
| Seed Rotation (Reversible) 晶转速率（可逆） | 0-50 rpm | ||||||||
| Crucible Rotation (Reversible) 锅转速率（可逆） | 0-20 rpm | ||||||||
| Silicon Charge Capacity硅投料量 | |||||||||
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*Hot Zones available to fit following crucible sizes 热场尺寸取决于坩锅直径 **Charges can be enhanced with Xtramelt? Feeder 使用 Xtramelt? 二次加料系统可提高装料量 |
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Crucible Diameter* 坩埚直径 |
Crucible Height* 坩埚高度 |
Charge Size Cold Pack 冷装投料量 |
Enhanced Charge** 复投装料量 |
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| 18.0 in | 13.5 in | 60 kg | 75 kg | ||||||
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