Semiconductor Level Crystal Growing Furnace CG6000-Dalian Linton NC Machine Co., Ltd
Semiconductor Level Crystal Growing Furnace CG6000

Semiconductor Level Crystal Growing Furnace CG6000-Dalian Linton NC Machine Co., Ltd

  • Optimized for 3"-6" CZ Ingot Growth
  • Leading Full Digital Control System
  • Advanced Hotzone Design
  • Successful Operation Experience over 30 Years
  • More than 1000 Sets Installed Worldwide

Main Parameter
Performance
  Furnace Chamber Diameter   762 mm (30 in)
  Pull Chamber Doorway Height   2108 mm (83 in)
  Throat Diameter   0-508 mm/hr
  Seed Jog Speed (Nominal)   508 mm/min
  Total Crucible Travel   292 mm (11.5 in )
  Crucible Lift Rate   0-254 mm/hr
  Crucible Jog Speed (Nominal)   50.8 mm/min
  Seed Rotation (Reversible)   0-50 rpm
  Crucible Rotation (Reversible)   0-20 rpm

Silicon Charge Capacity
  *Hot Zones available to fit following crucible sizes
  **Charges can be enhanced with Xtramelt? Feeder 
  Crucible Diameter*
  Crucible Height*
  Charge Size Cold Pack
  Enhanced Charge**
  18.0 in   13.5 in   60 kg   75 kg


Return